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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1162 DESCRIPTION *High DC Current Gain: hFE= 400(Min.)@IC= 2A *High Switching Speed *Low Collector Saturation Voltage APPLICATIONS *Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 VALUE 500 300 10 5 10 0.5 40 UNIT V V V A A A PC Collector Power Dissipation @ Ta=25 TJ Tstg Junction Temperature Storage Temperature Range 1.5 150 -55~150 W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1162 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 5mA B 2.0 V A ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 hFE-1 DC Current Gain IC= 2A ; VCE= 2V 400 3000 hFE-2 DC Current Gain IC= 3A ; VCE= 2V 100 Switching Times s ton Turn-On Time IC= 3A; IB1= -IB2= 30mA; RL= 50,VCC150V 1.0 ts Storage Time 12 s tf Fall Time 6 s hFE-1 Classifications M 400-800 L 600-1200 K 1000-3000 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD1162
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